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dc.contributor.authorChen, Sheng-Wenen_US
dc.contributor.authorKung, Te-Mingen_US
dc.contributor.authorLiu, Chuan-Puen_US
dc.contributor.authorChang, Shih-Chiehen_US
dc.contributor.authorCheng, Yi-Lungen_US
dc.contributor.authorWang, Ying-Langen_US
dc.date.accessioned2014-12-08T15:21:51Z-
dc.date.available2014-12-08T15:21:51Z-
dc.date.issued2012-03-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.51.036504en_US
dc.identifier.urihttp://hdl.handle.net/11536/15564-
dc.description.abstractIn this study, the dependence of Cu electrochemical mechanical planarization (ECMP) rate on electric potential and mechanical force in electrolyte is investigated using potentiodynamic analysis, electrochemical impedance spectroscopy (EIS), and X-ray photoelectron spectroscopy (XPS). In chemical etching, CMP, electropolishing, and ECMP processes, the Cu removal rate is mainly affected by the interplay between electric potential and mechanical force. An equivalent circuit is built by fitting the EIS results to explain the behavior of Cu dissolution and Cu passive film. The Cu dissolution rate increased with decreasing charge-transfer time-delay. The resistance of the Cu passive film (R-p) is proportional to the intensity ratio of Cu2O/[Cu(OH)(2) + CuO]. (C) 2012 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleEffect of Electric Potential and Mechanical Force on Copper Electro-Chemical Mechanical Planarizationen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.51.036504en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume51en_US
dc.citation.issue3en_US
dc.citation.epageen_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000301348400052-
dc.citation.woscount0-
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