Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device

Title:	Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device
Authors:	Syu, Yong-En Chang, Ting-Chang Tsai, Tsung-Ming Chang, Geng-Wei Chang, Kuan-Chang Lou, Jyun-Hao Tai, Ya-Hsiang Tsai, Ming-Jinn Wang, Ying-Lang Sze, Simon M. 電子工程學系及電子研究所光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics
Keywords:	Nonvolatile memory;resistance switching;tip electric field;tungsten silicide (WSi)
Issue Date:	1-Mar-2012
Abstract:	Resistance random access memory (RRAM) is a great potential candidate for next-generation nonvolatile memory due to the outstanding memory characteristic. However, the resistance switching mechanism is still a riddle nowadays. In this letter, the switching mechanism is investigated by current-voltage (I-V) curve fitting in the TiN/WSiOX/Pt RRAM device. The asymmetric phenomenon of the carrier conduction behavior is explained at the high-resistance state in high electric field. The switching behavior is regarded to tip electric field by localizing the filament between the interface of top electrode and insulator.
URI:	http://dx.doi.org/10.1109/LED.2011.2182600 http://hdl.handle.net/11536/15593
ISSN:	0741-3106
DOI:	10.1109/LED.2011.2182600
Journal:	IEEE ELECTRON DEVICE LETTERS
Volume:	33
Issue:	3
Begin Page:	342
End Page:	344
Appears in Collections:	Articles

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