標題: | Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device |
作者: | Syu, Yong-En Chang, Ting-Chang Tsai, Tsung-Ming Chang, Geng-Wei Chang, Kuan-Chang Lou, Jyun-Hao Tai, Ya-Hsiang Tsai, Ming-Jinn Wang, Ying-Lang Sze, Simon M. 電子工程學系及電子研究所 光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics |
關鍵字: | Nonvolatile memory;resistance switching;tip electric field;tungsten silicide (WSi) |
公開日期: | 1-三月-2012 |
摘要: | Resistance random access memory (RRAM) is a great potential candidate for next-generation nonvolatile memory due to the outstanding memory characteristic. However, the resistance switching mechanism is still a riddle nowadays. In this letter, the switching mechanism is investigated by current-voltage (I-V) curve fitting in the TiN/WSiOX/Pt RRAM device. The asymmetric phenomenon of the carrier conduction behavior is explained at the high-resistance state in high electric field. The switching behavior is regarded to tip electric field by localizing the filament between the interface of top electrode and insulator. |
URI: | http://dx.doi.org/10.1109/LED.2011.2182600 http://hdl.handle.net/11536/15593 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2011.2182600 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 33 |
Issue: | 3 |
起始頁: | 342 |
結束頁: | 344 |
顯示於類別: | 期刊論文 |