Three-Transistor AMOLED Pixel Circuit With Threshold Voltage Compensation Function Using Dual-Gate IGZO TFT

标题:	Three-Transistor AMOLED Pixel Circuit With Threshold Voltage Compensation Function Using Dual-Gate IGZO TFT
作者:	Tai, Ya-Hsiang Chou, Lu-Sheng Chiu, Hao-Lin Chen, Bo-Cheng 光电工程学系显示科技研究所 Department of Photonics Institute of Display
关键字:	Active-matrix organic light-emitting diode (AMOLED);dual-gate amorphous InGaZnO4 (a-IGZO) thin-film transistor (TFT);threshold voltage (Vth) compensation circuit
公开日期:	1-三月-2012
摘要:	In addition to the gate electrode at the bottom, a dual-gate amorphous InGaZnO4 thin-film transistor (TFT) has a secondary gate electrode on the top. The threshold voltage (Vth) of the TFT using the bottom gate in its normal operation can be controlled by the top gate. Based on this phenomenon, a simple circuit of active-matrix organic light-emitting diode using the top gate to compensate threshold voltage variation is proposed. This new pixel circuit uses only three TFTs and two capacitors. The validity of Vth compensation is verified experimentally.
URI:	http://dx.doi.org/10.1109/LED.2011.2179282 http://hdl.handle.net/11536/15595
ISSN:	0741-3106
DOI:	10.1109/LED.2011.2179282
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	33
Issue:	3
起始页:	393
结束页:	395
显示于类别：	Articles

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APA	Tai, Y., Chou, L., Chiu, H., & Chen, B. (2012). Three-Transistor AMOLED Pixel Circuit With Threshold Voltage Compensation Function Using Dual-Gate IGZO TFT. WOS:000300580000031.
Bibtex	@article{Tai2012Three-Transistor, title={Three-Transistor AMOLED Pixel Circuit With Threshold Voltage Compensation Function Using Dual-Gate IGZO TFT}, author={Tai, Ya-Hsiang and Chou, Lu-Sheng and Chiu, Hao-Lin and Chen, Bo-Cheng}, journal={WOS:000300580000031}, year={2012}, url={https://ir.lib.nycu.edu.tw/handle/11536/15595?locale=zh_CN}, }