标题: Impact of Uniaxial Strain on Channel Backscattering Characteristics and Drain Current Variation for Nanoscale PMOSFETs
作者: Lee, Wei
Kuo, Jack J. -Y.
Chen, Willian P. -N.
Su, Pin
Jeng, Min-Chie
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
公开日期: 2009
摘要: Using an improved temperature-dependent method, this paper clarifies that channel backscattering of nanoscale PMOSFETs can be reduced by the uniaxially compressive strain. For the first time, the electrostatic potential of the source-channel junction barrier has been experimentally characterized with strain and gate voltage dependence. We further demonstrate that the strain technology can improve the drain current variation as well as the mismatching properties through the enhanced ballistic efficiency. Moreover, the improvement shows gate length and drain voltage dependence.
URI: http://hdl.handle.net/11536/15609
ISBN: 978-4-86348-009-4
期刊: 2009 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS
起始页: 112
结束页: 113
显示于类别:Conferences Paper