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dc.contributor.authorChen, Chien-Chihen_US
dc.contributor.authorWu, YewChung Sermonen_US
dc.contributor.authorChang, Chih-Pangen_US
dc.date.accessioned2014-12-08T15:22:00Z-
dc.date.available2014-12-08T15:22:00Z-
dc.date.issued2012-02-15en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.matchemphys.2011.11.080en_US
dc.identifier.urihttp://hdl.handle.net/11536/15629-
dc.description.abstractA new manufacturing method for Ni-metal-induced lateral crystallization thin film transistors (NILC-TFTs) using fluorine-silicate-glass (FSG) was proposed. In FSG-TFTs, fluorine ion was implanted into the buffer oxide layer to form FSG before NILC processes. It was found FSG-TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON/OFF current ratio, low trap state density, low interface trap state density, and good reliability compared with typical NILC-TFTs. (c) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectFluorinated-silicate-glass (FSG)en_US
dc.subjectPolycrystalline silicon thin-film transistorsen_US
dc.subject(poly-Si TFTs)en_US
dc.subjectNi-metal-induced lateral crystallizationen_US
dc.subject(NILC)en_US
dc.titleEnhanced performance and reliability of NILC-TFTs using FSG buffer layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.matchemphys.2011.11.080en_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume132en_US
dc.citation.issue2-3en_US
dc.citation.spage637en_US
dc.citation.epage640en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000301083800061-
dc.citation.woscount1-
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