標題: Unipolar Ni/GeOx/PbZr0.5Ti0.5O3/TaN Resistive Switching Memory
作者: Chou, Kun-I
Cheng, Chun-Hu
Chen, Po-Chun
Yeh, Fon-Shan
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Dec-2011
摘要: In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0.5Ti0.5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >10(2), for 85 degrees C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx. (C) 2011 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.50.121801
http://hdl.handle.net/11536/15717
ISSN: 0021-4922
DOI: 10.1143/JJAP.50.121801
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 50
Issue: 12
結束頁: 
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