Unipolar Ni/GeOx/PbZr0.5Ti0.5O3/TaN Resistive Switching Memory

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DC 欄位	值	語言
dc.contributor.author	Chou, Kun-I	en_US
dc.contributor.author	Cheng, Chun-Hu	en_US
dc.contributor.author	Chen, Po-Chun	en_US
dc.contributor.author	Yeh, Fon-Shan	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:22:12Z	-
dc.date.available	2014-12-08T15:22:12Z	-
dc.date.issued	2011-12-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.50.121801	en_US
dc.identifier.uri	http://hdl.handle.net/11536/15717	-
dc.description.abstract	In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0.5Ti0.5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >10(2), for 85 degrees C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx. (C) 2011 The Japan Society of Applied Physics	en_US
dc.language.iso	en_US	en_US
dc.title	Unipolar Ni/GeOx/PbZr0.5Ti0.5O3/TaN Resistive Switching Memory	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.50.121801	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	50	en_US
dc.citation.issue	12	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000300707400024	-
dc.citation.woscount	1	-
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