Unipolar Ni/GeOx/PbZr0.5Ti0.5O3/TaN Resistive Switching Memory

Abstract

In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0.5Ti0.5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >10(2), for 85 degrees C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx. (C) 2011 The Japan Society of Applied Physics