Optimization of the absorber layer for a-Si:H and a-Si1-xGex:H single-junction solar cells

標題:	Optimization of the absorber layer for a-Si:H and a-Si1-xGex:H single-junction solar cells
作者:	Tsai, C. C. Hsu, C. H. Hsu, H. J. Cheng, P. H. Wang, C. M. Huang, Y. T. 光電工程學系 Department of Photonics
關鍵字:	photovoltaics;thin film solar cells;a-Si:H;amorphous Si-Ge alloy
公開日期:	2011
摘要:	This paper focuses on the optimization of the absorber layers in single-junction a-Si:H and a-Si1-xGex:H solar cells. For a-Si:H thin-film solar cells, we have found the electrode-to-substrate (E/S) spacing is an important parameter. By optimizing the E/S spacing, the cell effi-ciency was improved from 7.62% to 8.70% due to an improvement in material quality and JSC. For a-Si1-xGex:H solar cells, by optimizing the Ge-content, the microstructure parameter and the graded bandgap, we were able to improve the cell efficiency to 8.15%. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI:	http://hdl.handle.net/11536/15748 http://dx.doi.org/10.1002/pssc.201001229
ISSN:	1862-6351
DOI:	10.1002/pssc.201001229
期刊:	PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 10
Volume:	8
Issue:	10
顯示於類別：	會議論文

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