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dc.contributor.authorYen, STen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:02:59Z-
dc.date.available2014-12-08T15:02:59Z-
dc.date.issued1996-01-01en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://dx.doi.org/10.1109/3.481914en_US
dc.identifier.urihttp://hdl.handle.net/11536/1576-
dc.description.abstractSemiconductor lasers with vertically integrated passive waveguides are theoretically studied using the coupled mode theory and exact calculation. Formulas for the threshold current density and the far-field patterns are derived. The physical concepts of the modulation of the beam divergence by passive waveguides are given, The exact caluclated results show that the beam divergence can be greatly improved by paying a price of only a slight increase of the theshold current density, The operation mode selection is discussed. Attention is also paid to the appearance of side lobes for very narrow far-field patterns, Discussions are given for device design,en_US
dc.language.isoen_USen_US
dc.titleTheoretical investigation on semiconductor lasers with passive waveguidesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/3.481914en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.citation.volume32en_US
dc.citation.issue1en_US
dc.citation.spage4en_US
dc.citation.epage13en_US
dc.contributor.department交大名义发表zh_TW
dc.contributor.department电子工程学系及电子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996TP75200002-
dc.citation.woscount9-
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