Theoretical investigation on semiconductor lasers with passive waveguides

doi:10.1109/3.481914

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yen, ST	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:02:59Z	-
dc.date.available	2014-12-08T15:02:59Z	-
dc.date.issued	1996-01-01	en_US
dc.identifier.issn	0018-9197	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/3.481914	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1576	-
dc.description.abstract	Semiconductor lasers with vertically integrated passive waveguides are theoretically studied using the coupled mode theory and exact calculation. Formulas for the threshold current density and the far-field patterns are derived. The physical concepts of the modulation of the beam divergence by passive waveguides are given, The exact caluclated results show that the beam divergence can be greatly improved by paying a price of only a slight increase of the theshold current density, The operation mode selection is discussed. Attention is also paid to the appearance of side lobes for very narrow far-field patterns, Discussions are given for device design,	en_US
dc.language.iso	en_US	en_US
dc.title	Theoretical investigation on semiconductor lasers with passive waveguides	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/3.481914	en_US
dc.identifier.journal	IEEE JOURNAL OF QUANTUM ELECTRONICS	en_US
dc.citation.volume	32	en_US
dc.citation.issue	1	en_US
dc.citation.spage	4	en_US
dc.citation.epage	13	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1996TP75200002	-
dc.citation.woscount	9	-
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