标题: | n-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection |
作者: | Tasi, D. S. Kang, C. F. Wang, H. H. Lin, C. A. Ke, J. J. Chu, Y. H. He, J. H. 材料科学与工程学系 Department of Materials Science and Engineering |
公开日期: | 15-三月-2012 |
摘要: | A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO/LaAlO3 (LAO)/p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n-ZnO/LAO/p-Si PDs due to the high potential barrier between LAO and p-Si layers (similar to 2.0 eV). These results support the use of n-ZnO/LAO/p-Si PDs in the visible-blind UV PDs in a visible-light environment. (C) 2012 Optical Society of America |
URI: | http://dx.doi.org/10.1364/OL.37.001112 http://hdl.handle.net/11536/15801 |
ISSN: | 0146-9592 |
DOI: | 10.1364/OL.37.001112 |
期刊: | OPTICS LETTERS |
Volume: | 37 |
Issue: | 6 |
起始页: | 1112 |
结束页: | 1114 |
显示于类别: | Articles |
文件中的档案:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.