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dc.contributor.authorTzeng, Wen-Hsienen_US
dc.contributor.authorZhong, Chia-Wenen_US
dc.contributor.authorLiu, Kou-Chenen_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorLin, Horng-Chihen_US
dc.contributor.authorChan, Yi-Chunen_US
dc.contributor.authorKuo, Chun-Chihen_US
dc.contributor.authorTsai, Feng-Yuen_US
dc.contributor.authorTseng, Ming Hongen_US
dc.contributor.authorChen, Pang-Shiuen_US
dc.contributor.authorLee, Heng-Yuanen_US
dc.contributor.authorChen, Fredericken_US
dc.contributor.authorTsai, Ming-Jinnen_US
dc.date.accessioned2014-12-08T15:22:23Z-
dc.date.available2014-12-08T15:22:23Z-
dc.date.issued2012-02-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2011.10.118en_US
dc.identifier.urihttp://hdl.handle.net/11536/15848-
dc.description.abstractA transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO2/Al2O3/center dot center dot center dot/HfO2/Al2O3/ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons. Crown Copyright (c) 2011 Published by Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMultilayeren_US
dc.subjectStacked oxideen_US
dc.subjectResistive memoryen_US
dc.subjectRRAMen_US
dc.titleResistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2011.10.118en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume520en_US
dc.citation.issue8en_US
dc.citation.spage3415en_US
dc.citation.epage3418en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000301710800062-
dc.citation.woscount1-
Appears in Collections:Articles


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