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dc.contributor.authorLee, WIen_US
dc.date.accessioned2014-12-08T15:03:00Z-
dc.date.available2014-12-08T15:03:00Z-
dc.date.issued1995-12-18en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.115372en_US
dc.identifier.urihttp://hdl.handle.net/11536/1593-
dc.description.abstractWide bandwidth AlAs/Al0.6Ga0.4As tandem Bragg reflectors were grown by organometallic vapor phase epitaxy. Quarter-wave reflector stacks designed for different wavelengths were placed in cascade in epitaxially grown structures to expand the high reflectance bands. Intermediate low-index layers were put in between every two stacks to suppress the transmission peaks in the centers of the combined high reflectance bands. While a single-stack structure showed a full width half-maximum bandwidth of 500 Angstrom, the two-stack and the three-stack structures effectively doubled and tripled this bandwidth to approximately 1000 and 1500 Angstrom, respectively. (C) 1995 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleWide bandwidth AlAs/AlGaAs tandem Bragg reflectors grown by organometallic vapor phase epitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.115372en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume67en_US
dc.citation.issue25en_US
dc.citation.spage3753en_US
dc.citation.epage3755en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1995TK75900028-
dc.citation.woscount4-
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