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dc.contributor.authorLIN, HYen_US
dc.contributor.authorLEI, TFen_US
dc.contributor.authorLIN, HCen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorTWU, RCen_US
dc.contributor.authorDENG, RCen_US
dc.contributor.authorLIN, JDen_US
dc.date.accessioned2014-12-08T15:03:01Z-
dc.date.available2014-12-08T15:03:01Z-
dc.date.issued1995-12-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/11536/1612-
dc.description.abstractIn situ boron-doped polycrystalline Si1-xGex (poly-Si1-xGex) films deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) system were characterized. Optimum fitted values of grain boundary trap state densities, 4.0 x 10(12) cm(-2) and 4.9 x 10(12) cm(-2) were obtained for poly-Si and poly-Si0.79Ge0.21, respectively. The extracted average carrier concentration in the grain agrees with secondary ion mass spectroscopy (SIMS) analysis. In turn, we found that these films are suitable Hall elements to sense magnetic field. Experimental results show that the sensitivity decreased with the increasing input current, which can be well explained using the thermionic emission theory. Finally, we use these films to fabricate thin film transistors.en_US
dc.language.isoen_USen_US
dc.titleCHARACTERISTICS OF POLYCRYSTALLINE FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEMen_US
dc.typeArticleen_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume38en_US
dc.citation.issue12en_US
dc.citation.spage2029en_US
dc.citation.epage2033en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1995TC64500008-
dc.citation.woscount0-
Appears in Collections:Articles


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