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dc.contributor.authorWANG, THen_US
dc.contributor.authorCHANG, TEen_US
dc.contributor.authorHUANG, CMen_US
dc.contributor.authorYANG, JYen_US
dc.contributor.authorCHANG, KMen_US
dc.contributor.authorCHIANG, LPen_US
dc.date.accessioned2014-12-08T15:03:02Z-
dc.date.available2014-12-08T15:03:02Z-
dc.date.issued1995-12-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.475589en_US
dc.identifier.urihttp://hdl.handle.net/11536/1623-
dc.description.abstractThe structural dependence of the hot carrier stress incurred drain leakage current via band-trap-band tunneling in off-state has been modeled and characterized in conventional S/D, DDD, and LDD n-MOSFET structures, The results shows that lateral field enhanced band-trap-band tunneling is primarily responsible for an increased drain leakage current after hot carrier stress in LDD structures while vertical field induced tunneling is dominant in conventional S/D and DDD structures.en_US
dc.language.isoen_USen_US
dc.titleSTRUCTURAL EFFECT ON BAND-TRAP-BAND TUNNELING INDUCED DRAIN LEAKAGE IN N-MOSFETSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.475589en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume16en_US
dc.citation.issue12en_US
dc.citation.spage566en_US
dc.citation.epage568en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995TH28600012-
dc.citation.woscount13-
Appears in Collections:Articles


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