STRUCTURAL EFFECT ON BAND-TRAP-BAND TUNNELING INDUCED DRAIN LEAKAGE IN N-MOSFETS

doi:10.1109/55.475589

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WANG, TH	en_US
dc.contributor.author	CHANG, TE	en_US
dc.contributor.author	HUANG, CM	en_US
dc.contributor.author	YANG, JY	en_US
dc.contributor.author	CHANG, KM	en_US
dc.contributor.author	CHIANG, LP	en_US
dc.date.accessioned	2014-12-08T15:03:02Z	-
dc.date.available	2014-12-08T15:03:02Z	-
dc.date.issued	1995-12-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.475589	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1623	-
dc.description.abstract	The structural dependence of the hot carrier stress incurred drain leakage current via band-trap-band tunneling in off-state has been modeled and characterized in conventional S/D, DDD, and LDD n-MOSFET structures, The results shows that lateral field enhanced band-trap-band tunneling is primarily responsible for an increased drain leakage current after hot carrier stress in LDD structures while vertical field induced tunneling is dominant in conventional S/D and DDD structures.	en_US
dc.language.iso	en_US	en_US
dc.title	STRUCTURAL EFFECT ON BAND-TRAP-BAND TUNNELING INDUCED DRAIN LEAKAGE IN N-MOSFETS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.475589	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	16	en_US
dc.citation.issue	12	en_US
dc.citation.spage	566	en_US
dc.citation.epage	568	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995TH28600012	-
dc.citation.woscount	13	-
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