Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hsiao, Hsiang-Yao | en_US |
dc.contributor.author | Liu, Chien-Min | en_US |
dc.contributor.author | Lin, Han-Wen | en_US |
dc.contributor.author | Liu, Tao-Chi | en_US |
dc.contributor.author | Lu, Chia-Ling | en_US |
dc.contributor.author | Huang, Yi-Sa | en_US |
dc.contributor.author | Chen, Chih | en_US |
dc.contributor.author | Tu, K. N. | en_US |
dc.date.accessioned | 2014-12-08T15:23:13Z | - |
dc.date.available | 2014-12-08T15:23:13Z | - |
dc.date.issued | 2012-05-25 | en_US |
dc.identifier.issn | 0036-8075 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/16300 | - |
dc.description.abstract | Highly oriented [111] Cu grains with densely packed nanotwins have been fabricated by direct-current electroplating with a high stirring rate. The [111]-oriented and nanotwinned Cu (nt-Cu) allow for the unidirectional growth of Cu6Sn5 intermetallics in the microbumps of three-dimensional integrated-circuit packaging; a uniform microstructure in a large number of microbumps of controlled orientation can be obtained. The high-density twin boundaries in the nt-Cu serve as vacancy sinks during the solid-state reaction between Pb-free solder and Cu and greatly reduce the formation of Kirkendall (or Frenkel) voids. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Unidirectional Growth of Microbumps on (111)-Oriented and Nanotwinned Copper | en_US |
dc.type | Article | en_US |
dc.identifier.journal | SCIENCE | en_US |
dc.citation.volume | 336 | en_US |
dc.citation.issue | 6084 | en_US |
dc.citation.epage | 1007 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000304406800038 | - |
dc.citation.woscount | 42 | - |
Appears in Collections: | Articles |
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