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dc.contributor.authorHsiao, Hsiang-Yaoen_US
dc.contributor.authorLiu, Chien-Minen_US
dc.contributor.authorLin, Han-Wenen_US
dc.contributor.authorLiu, Tao-Chien_US
dc.contributor.authorLu, Chia-Lingen_US
dc.contributor.authorHuang, Yi-Saen_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorTu, K. N.en_US
dc.date.accessioned2014-12-08T15:23:13Z-
dc.date.available2014-12-08T15:23:13Z-
dc.date.issued2012-05-25en_US
dc.identifier.issn0036-8075en_US
dc.identifier.urihttp://hdl.handle.net/11536/16300-
dc.description.abstractHighly oriented [111] Cu grains with densely packed nanotwins have been fabricated by direct-current electroplating with a high stirring rate. The [111]-oriented and nanotwinned Cu (nt-Cu) allow for the unidirectional growth of Cu6Sn5 intermetallics in the microbumps of three-dimensional integrated-circuit packaging; a uniform microstructure in a large number of microbumps of controlled orientation can be obtained. The high-density twin boundaries in the nt-Cu serve as vacancy sinks during the solid-state reaction between Pb-free solder and Cu and greatly reduce the formation of Kirkendall (or Frenkel) voids.en_US
dc.language.isoen_USen_US
dc.titleUnidirectional Growth of Microbumps on (111)-Oriented and Nanotwinned Copperen_US
dc.typeArticleen_US
dc.identifier.journalSCIENCEen_US
dc.citation.volume336en_US
dc.citation.issue6084en_US
dc.citation.epage1007en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000304406800038-
dc.citation.woscount42-
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