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dc.contributor.authorLEI, TFen_US
dc.contributor.authorCHEN, TPen_US
dc.contributor.authorLIN, HCen_US
dc.contributor.authorCHANG, CYen_US
dc.date.accessioned2014-12-08T15:03:03Z-
dc.date.available2014-12-08T15:03:03Z-
dc.date.issued1995-12-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.477767en_US
dc.identifier.urihttp://hdl.handle.net/11536/1635-
dc.description.abstractA new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p(+)-n shallow junctions, The junction depth of the Si-B source diode has been measured and compared with that of a BF2+-implanted poly-Si source diode, It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF2+ source diode, This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Angstrom, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm(2) at -5 V were obtained, As the junction depth shrank to 300 Angstrom, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm(2), respectively, These results demonstrated that a uniform ultrashallow p(+)-n junction can be obtained by using a thin Si-B layer as a diffusion source.en_US
dc.language.isoen_USen_US
dc.titleLOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER AS SOLID DIFFUSION SOURCE FOR POLYSILICON CONTACTED P(+)-N SHALLOW JUNCTIONen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.477767en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume42en_US
dc.citation.issue12en_US
dc.citation.spage2104en_US
dc.citation.epage2110en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995TH17200011-
dc.citation.woscount5-
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