Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | YANG, CK | en_US |
dc.contributor.author | LEI, TF | en_US |
dc.contributor.author | LEE, CL | en_US |
dc.date.accessioned | 2014-12-08T15:03:03Z | - |
dc.date.available | 2014-12-08T15:03:03Z | - |
dc.date.issued | 1995-12-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/16.477775 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/1636 | - |
dc.description.abstract | The electrical characteristics of top-gate thin-film transistors (TFT's) fabricated on the nitrogen-implanted polysilicon of the doses ranging from 2 x 10(12)-2 x 10(14) ions/cm(2) were investigated in this work, The experimental results showed that nitrogen implanted into polysilicon followed by an 850 degrees C 1 h annealing step had some passivation effect and this effect was much enhanced by a following H-2-plasma treatment. The threshold voltages, subthreshold swings, ON-OFF current ratios, and field effect mobilities of both n-channel and p-channel TFT's were all improved, Moreover, the hot-carrier reliability was also improved, A donor effect of the nitrogen in polysilicon was also found which affected the overall passivation effect on the p-channel TFT's. | en_US |
dc.language.iso | en_US | en_US |
dc.title | CHARACTERISTICS OF TOP-GATE THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMS | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/16.477775 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 42 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | 2163 | en_US |
dc.citation.epage | 2169 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1995TH17200019 | - |
dc.citation.woscount | 10 | - |
Appears in Collections: | Articles |
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