Characteristics of 4H-SiC RF MOSFETs on a Semi-insulating Substrate

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DC 欄位	值	語言
dc.contributor.author	Wu, Tian-Li	en_US
dc.contributor.author	Huang, Chih-Fang	en_US
dc.contributor.author	Cheng, Chun-Hu	en_US
dc.date.accessioned	2014-12-08T15:23:24Z	-
dc.date.available	2014-12-08T15:23:24Z	-
dc.date.issued	2011	en_US
dc.identifier.isbn	978-1-60768-217-2	en_US
dc.identifier.issn	1938-5862	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16395	-
dc.description.abstract	This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with f(T)/f(MAX) of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.	en_US
dc.language.iso	en_US	en_US
dc.title	Characteristics of 4H-SiC RF MOSFETs on a Semi-insulating Substrate	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 12	en_US
dc.citation.volume	35	en_US
dc.citation.issue	6	en_US
dc.citation.epage	173	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000305936300020	-
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