標題: Isolation on Si wafers by MeV proton bombardment for RF integrated circuits
作者: Lee, LS
Liao, CP
Lee, CL
Huang, TH
Tang, DDL
Duh, TS
Yang, TT
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: aluminum mask;annealing;flatband shift;proton bombardment;RF IC
公開日期: 1-五月-2001
摘要: This paper studies issues related with using high energy protons to create local semi-insulating silicon regions on IC wafers for device isolation and realization of high-Q IC inductors, Topics on two approaches, i.e., one using Al as the radiation mask and the other using proton direct-write on wafers were studied, It was shown that Al can effectively mask the proton bombardment of 15 MeV up to the fluence of 10(17) cm(-2). For the unmasking direct write of the proton bombardment, isolation in the silicon wafer can be achieved without damaging active devices if the proton fluence is kept below 1 x 10(14) cm-2 with the substrate resistivity level chosen at 140 Omega -cm, or kept at 1 x 10(15) cm(-2) with the substrate resistivity level chosen at 15 Omega -cm. Under the above approaches, the 1 h-200 degreesC thermal treatment, which is necessary for device final packaging, still gives enough high resistivity for the semi-insulating regions while recovers somewhat the active device characteristics, For the integrated passive inductor fabricated on the surface of the silicon wafer, the proton radiation improves its Q value.
URI: http://dx.doi.org/10.1109/16.918241
http://hdl.handle.net/11536/29661
ISSN: 0018-9383
DOI: 10.1109/16.918241
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 48
Issue: 5
起始頁: 928
結束頁: 934
顯示於類別:期刊論文


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