標題: | Isolation on Si wafers by MeV proton bombardment for RF integrated circuits |
作者: | Lee, LS Liao, CP Lee, CL Huang, TH Tang, DDL Duh, TS Yang, TT 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | aluminum mask;annealing;flatband shift;proton bombardment;RF IC |
公開日期: | 1-五月-2001 |
摘要: | This paper studies issues related with using high energy protons to create local semi-insulating silicon regions on IC wafers for device isolation and realization of high-Q IC inductors, Topics on two approaches, i.e., one using Al as the radiation mask and the other using proton direct-write on wafers were studied, It was shown that Al can effectively mask the proton bombardment of 15 MeV up to the fluence of 10(17) cm(-2). For the unmasking direct write of the proton bombardment, isolation in the silicon wafer can be achieved without damaging active devices if the proton fluence is kept below 1 x 10(14) cm-2 with the substrate resistivity level chosen at 140 Omega -cm, or kept at 1 x 10(15) cm(-2) with the substrate resistivity level chosen at 15 Omega -cm. Under the above approaches, the 1 h-200 degreesC thermal treatment, which is necessary for device final packaging, still gives enough high resistivity for the semi-insulating regions while recovers somewhat the active device characteristics, For the integrated passive inductor fabricated on the surface of the silicon wafer, the proton radiation improves its Q value. |
URI: | http://dx.doi.org/10.1109/16.918241 http://hdl.handle.net/11536/29661 |
ISSN: | 0018-9383 |
DOI: | 10.1109/16.918241 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 48 |
Issue: | 5 |
起始頁: | 928 |
結束頁: | 934 |
顯示於類別: | 期刊論文 |