Room-Temperature Electro-Luminescence of Type-II GaSb/GaAs Quantum Rings

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DC 欄位	值	語言
dc.contributor.author	Lin, Wei-Hsun	en_US
dc.contributor.author	Lin, Meng-Yu	en_US
dc.contributor.author	Wu, Shung-Yi	en_US
dc.contributor.author	Lin, Shih-Yen	en_US
dc.date.accessioned	2014-12-08T15:23:28Z	-
dc.date.available	2014-12-08T15:23:28Z	-
dc.date.issued	2012-07-15	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16429	-
dc.description.abstract	The influence of Sb/background As flux ratios on GaSb nano-structures is investigated in this letter. With decreasing Sb/background As flux ratios under high Sb irradiation during the post soaking procedure, ring formation, photoluminescence (PL) intensity enhancement, and PL peak red shift are observed. With further reduced Sb flux and Sb/background As ratios, the observed more intense PL intensities of the quantum-ring (QR) samples compared with quantum dots suggest that more electron-hole wave function overlapping is obtained. The observation of room-temperature electro-luminescence of a QR PIN diode has revealed the potential of the nano-structure in light-emitting device application.	en_US
dc.language.iso	en_US	en_US
dc.subject	GaSb quantum rings (QR)	en_US
dc.subject	light-emitting diodes (LEDs)	en_US
dc.title	Room-Temperature Electro-Luminescence of Type-II GaSb/GaAs Quantum Rings	en_US
dc.type	Article	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	24	en_US
dc.citation.issue	14	en_US
dc.citation.epage	1203	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000305254000011	-
dc.citation.woscount	10	-
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