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dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorYeh, Chun-Chengen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorTsai, Chuang-Chuangen_US
dc.contributor.authorChen, Liang-Haoen_US
dc.date.accessioned2014-12-08T15:23:29Z-
dc.date.available2014-12-08T15:23:29Z-
dc.date.issued2012-07-10en_US
dc.identifier.issn0935-9648en_US
dc.identifier.urihttp://hdl.handle.net/11536/16435-
dc.language.isoen_USen_US
dc.subjecthigh mobilityen_US
dc.subjectoxide semiconductorsen_US
dc.subjectthin film transistorsen_US
dc.subjectdefect reductionen_US
dc.subjectoxygen deficiencyen_US
dc.titleAchieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layeren_US
dc.typeArticleen_US
dc.identifier.journalADVANCED MATERIALSen_US
dc.citation.volume24en_US
dc.citation.issue26en_US
dc.citation.epage3509en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000305943900007-
dc.citation.woscount30-
Appears in Collections:Articles


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