標題: | Investigating electron depletion effect in amorphous indium-gallium-zinc-oxide thin-film transistor with a floating capping metal by technology computer-aided design simulation and leakage reduction |
作者: | Lu, Ting-Chou Chen, Wei-Tsung Zan, Hsiao-Wen Ker, Ming-Dou 電機學院 光電工程學系 College of Electrical and Computer Engineering Department of Photonics |
公開日期: | 1-六月-2014 |
摘要: | The electron distribution in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with a floating metal-semiconductor (MS) back interface is analyzed using a technology computer-aided design (TCAD) model. The channel geometry (i.e., length and thickness) effect is carefully investigated. At a high work function (i.e., 5 eV) of the capping metal, electrons inside a-IGZO are mostly removed by the capping metal (electron depletion effect). The depletion of the IGZO film leads to an increase in threshold voltage in a-IGZO TFT. TCAD simulation reveals that increasing channel length and decreasing IGZO thickness significantly enhance such an electron depletion effect. Finally, the electron depletion effect is applied to a-IGZO TFT with a high-conductivity IGZO film to greatly suppress the leakage current by over 5 orders. (C) 2014 The Japan Society of Applied Physics |
URI: | http://dx.doi.org/10.7567/JJAP.53.064302 http://hdl.handle.net/11536/24668 |
ISSN: | 0021-4922 |
DOI: | 10.7567/JJAP.53.064302 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 53 |
Issue: | 6 |
結束頁: | |
顯示於類別: | 期刊論文 |