標題: | Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement |
作者: | Zan, Hsiao-Wen Chen, Wei-Tsung Yeh, Chung-Cheng Hsueh, Hsiu-Wen Tsai, Chuang-Chuang Meng, Hsin-Fei 物理研究所 光電工程學系 Institute of Physics Department of Photonics |
公開日期: | 11-四月-2011 |
摘要: | In this study, we propose a floating dual gate (FDG) indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) with a floating metal back gate that is directly contact with IGZO without a dielectric layer. The floating back gate effect is investigated by changing the work function (phi) of the back gate. The FDG IGZO TFT exhibits an improved field-effect mobility (mu), unchanged subthreshold swing (SS), high on/off current ratio, and a tunable threshold voltage ranged (V(th)) from -5.0 to + 7.9 V without an additional back gate power supply. (C) 2011 American Institute of Physics. [doi:10.1063/1.3578403] |
URI: | http://dx.doi.org/10.1063/1.3578403 http://hdl.handle.net/11536/9007 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3578403 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 98 |
Issue: | 15 |
結束頁: | |
顯示於類別: | 期刊論文 |