Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer

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DC 欄位	值	語言
dc.contributor.author	Zan, Hsiao-Wen	en_US
dc.contributor.author	Yeh, Chun-Cheng	en_US
dc.contributor.author	Meng, Hsin-Fei	en_US
dc.contributor.author	Tsai, Chuang-Chuang	en_US
dc.contributor.author	Chen, Liang-Hao	en_US
dc.date.accessioned	2014-12-08T15:23:29Z	-
dc.date.available	2014-12-08T15:23:29Z	-
dc.date.issued	2012-07-10	en_US
dc.identifier.issn	0935-9648	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16435	-
dc.language.iso	en_US	en_US
dc.subject	high mobility	en_US
dc.subject	oxide semiconductors	en_US
dc.subject	thin film transistors	en_US
dc.subject	defect reduction	en_US
dc.subject	oxygen deficiency	en_US
dc.title	Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer	en_US
dc.type	Article	en_US
dc.identifier.journal	ADVANCED MATERIALS	en_US
dc.citation.volume	24	en_US
dc.citation.issue	26	en_US
dc.citation.epage	3509	en_US
dc.contributor.department	物理研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Institute of Physics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000305943900007	-
dc.citation.woscount	30	-
顯示於類別：	期刊論文

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