標題: | Ti/Pt/Ti/Cu-Metallized Interconnects for GaN High-Electron-Mobility Transistors on Si Substrate |
作者: | Lin, Yueh-Chin Kuo, Tza-Yao Chuang, Yu-Lin Wu, Chien-Hua Chang, Chia-Hua Huang, Kuan-Ning Chang, Edward Yi 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-Jun-2012 |
摘要: | Cu-metallized interconnects for GaN high-electron-mobility transistors (HEMTs) on Si substrate using a Pt/Cu diffusion barrier layer are investigated. Auger electron spectroscopy (AES) depth profiles indicate that the GaN/Au/Ti/Pt/Ti/Cu thin metal structure is thermally stable up to 350 degrees C. The Cu-metallized devices using the proposed metal scheme exhibited DC characteristics comparable to those of conventional Au-metallized GaN devices even after annealing at 350 degrees C for 30 min. No degradation in current with time was observed when the device was tested under 28 V high-voltage stress for 24 h at room temperature. These results indicate that the Cu-metallized airbridges with the Ti/Pt/Ti/Cu diffusion barrier layer can be used for GaN HEMT fabrication. (C) 2012 The Japan Society of Applied Physics |
URI: | http://dx.doi.org/066503 http://hdl.handle.net/11536/16515 |
ISSN: | 1882-0778 |
DOI: | 066503 |
期刊: | APPLIED PHYSICS EXPRESS |
Volume: | 5 |
Issue: | 6 |
結束頁: | |
Appears in Collections: | Articles |
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