Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 秘書處 | zh_TW |
| dc.date.accessioned | 2025-11-04T02:37:53Z | - |
| dc.date.available | 2025-11-04T02:37:53Z | - |
| dc.date.issued | 2025-10-31 | en_US |
| dc.identifier.uri | https://www.nycu.edu.tw/nycu/ch/app/news/view?module=headnews&id=2994&serno=cfc47932-1a5c-46d9-8ec7-4840d6358a4f | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/165338 | - |
| dc.description.abstract | 材料科學與工程學系黃彥霖助理教授領導的研究團隊，在國科會補助下，攜手台積電、工研院、國家同步輻射研究中心、史丹佛大學及國立中興大學，成功突破自旋軌道力矩磁阻式隨機存取記憶體（SOT-MRAM）的關鍵材料限制。 | zh_TW |
| dc.language.iso | en_US | en_US |
| dc.publisher | 國立陽明交通大學 | zh_TW |
| dc.publisher | National Yang Ming Chiao Tung University | en_US |
| dc.subject | 黃彥霖 | zh_TW |
| dc.title | 新型記憶體商用化再推進 | zh_TW |
| dc.type | Historical News | en_US |
| dc.identifier.journal | 陽明交大電子報 | zh_TW |
| dc.identifier.journal | NYCU E-NEWS | en_US |
| dc.citation.issue | 第104期 | en_US |
| Appears in Collections: | NYCU E-NEWS | |
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