標題: Effect of Flash Lamp Annealing and Laser Spike Annealing on Random Dopant Fluctuation of 15-nm Metal-Oxide-Semiconductor Devices
作者: Cheng, Hui-Wen
Hwang, Chih-Hong
Chao, Ko-An
Li, Yiming
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Random Dopant Fluctuation;Flash Lamp Annealing;Laser Spike Annealing;Kinetic Monte Carlo;Device Simulation
公開日期: 1-Mar-2012
摘要: Comparison of two different implantation processing techniques for random dopant (RD)-induced threshold voltage fluctuation (sigma V-th) in 15-nm metal-oxide-semiconductor (MOS) devices is reported. Implantations of flash lamp annealing and laser spike annealing are simulated using a kinetic Monte Carlo (KMC) technique. The KMC generated distributions are mapped into device channel for three-dimensional quantum mechanical transport simulation to estimate threshold voltage fluctuation. The main results of this study show that the laser spike annealing could achieve 30% reduction of RDF-induced sigma V-th for low-power application of 15-nm MOS devices, compared with flash lamp annealing.
URI: http://hdl.handle.net/11536/16554
ISSN: 1533-4880
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 12
Issue: 3
結束頁: 2462
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