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dc.contributor.authorIslamov, D. R.en_US
dc.contributor.authorGritsenko, V. A.en_US
dc.contributor.authorCheng, C. H.en_US
dc.contributor.authorChin, A.en_US
dc.date.accessioned2014-12-08T15:23:53Z-
dc.date.available2014-12-08T15:23:53Z-
dc.date.issued1970-01-01en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/32101en_US
dc.identifier.urihttp://hdl.handle.net/11536/16625-
dc.description.abstract"This study calculated the contribution of electrons and holes to TiO2 conductivity in Si/TiO2/Ni structures by conducting experiments on the injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of TiO2, enabling two-band conductivity. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737016]"en_US
dc.language.isoen_USen_US
dc.titleBipolar conductivity in nanocrystallized TiO2en_US
dc.typeArticleen_US
dc.identifier.doi32101en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume101en_US
dc.citation.issue3en_US
dc.citation.epageen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000306748000035-
dc.citation.woscount1-
Appears in Collections:Articles


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