High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees C

標題:	High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees C
作者:	Cheng, C. H. Lin, S. H. Jhou, K. Y. Chen, W. J. Chou, C. P. Yeh, F. S. Hu, J. Hwang, M. Arikado, T. McAlister, S. P. 機械工程學系電子工程學系及電子研究所 Department of Mechanical Engineering Department of Electronics Engineering and Institute of Electronics
關鍵字:	high kappa;Ir;metal-insulator-metal (MIM);TiO(2)
公開日期:	1-八月-2008
摘要:	We report Ir/TiO(2)/TaN metal-insulator-metal capacitors processed at only 300 degrees C, which show a capacitance density of 28 fF/mu m(2) and a leakage current of 3 x 10(-8) (25 degrees C) or 6 x 10(-7) (125 degrees C) A/cm(2) at -1 V. This performance is due to the combined effects of 300 degrees C nanocrystallized high-kappa, TiO(2), a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.
URI:	http://dx.doi.org/10.1109/LED.2008.2000833 http://hdl.handle.net/11536/8516
ISSN:	0741-3106
DOI:	10.1109/LED.2008.2000833
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	29
Issue:	8
起始頁:	845
結束頁:	847
顯示於類別：	期刊論文

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