標題: High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees C
作者: Cheng, C. H.
Lin, S. H.
Jhou, K. Y.
Chen, W. J.
Chou, C. P.
Yeh, F. S.
Hu, J.
Hwang, M.
Arikado, T.
McAlister, S. P.
機械工程學系
電子工程學系及電子研究所
Department of Mechanical Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: high kappa;Ir;metal-insulator-metal (MIM);TiO(2)
公開日期: 1-Aug-2008
摘要: We report Ir/TiO(2)/TaN metal-insulator-metal capacitors processed at only 300 degrees C, which show a capacitance density of 28 fF/mu m(2) and a leakage current of 3 x 10(-8) (25 degrees C) or 6 x 10(-7) (125 degrees C) A/cm(2) at -1 V. This performance is due to the combined effects of 300 degrees C nanocrystallized high-kappa, TiO(2), a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.
URI: http://dx.doi.org/10.1109/LED.2008.2000833
http://hdl.handle.net/11536/8516
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2000833
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 8
起始頁: 845
結束頁: 847
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