High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees C

doi:10.1109/LED.2008.2000833

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DC 欄位	值	語言
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Lin, S. H.	en_US
dc.contributor.author	Jhou, K. Y.	en_US
dc.contributor.author	Chen, W. J.	en_US
dc.contributor.author	Chou, C. P.	en_US
dc.contributor.author	Yeh, F. S.	en_US
dc.contributor.author	Hu, J.	en_US
dc.contributor.author	Hwang, M.	en_US
dc.contributor.author	Arikado, T.	en_US
dc.contributor.author	McAlister, S. P.	en_US
dc.date.accessioned	2014-12-08T15:11:06Z	-
dc.date.available	2014-12-08T15:11:06Z	-
dc.date.issued	2008-08-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2008.2000833	en_US
dc.identifier.uri	http://hdl.handle.net/11536/8516	-
dc.description.abstract	We report Ir/TiO(2)/TaN metal-insulator-metal capacitors processed at only 300 degrees C, which show a capacitance density of 28 fF/mu m(2) and a leakage current of 3 x 10(-8) (25 degrees C) or 6 x 10(-7) (125 degrees C) A/cm(2) at -1 V. This performance is due to the combined effects of 300 degrees C nanocrystallized high-kappa, TiO(2), a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.	en_US
dc.language.iso	en_US	en_US
dc.subject	high kappa	en_US
dc.subject	Ir	en_US
dc.subject	metal-insulator-metal (MIM)	en_US
dc.subject	TiO(2)	en_US
dc.title	High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees C	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2008.2000833	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	29	en_US
dc.citation.issue	8	en_US
dc.citation.spage	845	en_US
dc.citation.epage	847	en_US
dc.contributor.department	機械工程學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Mechanical Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000258096000008	-
dc.citation.woscount	37	-
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