Bipolar conductivity in nanocrystallized TiO2

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Islamov, D. R.	en_US
dc.contributor.author	Gritsenko, V. A.	en_US
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Chin, A.	en_US
dc.date.accessioned	2014-12-08T15:23:53Z	-
dc.date.available	2014-12-08T15:23:53Z	-
dc.date.issued	1970-01-01	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/32101	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16625	-
dc.description.abstract	"This study calculated the contribution of electrons and holes to TiO2 conductivity in Si/TiO2/Ni structures by conducting experiments on the injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of TiO2, enabling two-band conductivity. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737016]"	en_US
dc.language.iso	en_US	en_US
dc.title	Bipolar conductivity in nanocrystallized TiO2	en_US
dc.type	Article	en_US
dc.identifier.doi	32101	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	101	en_US
dc.citation.issue	3	en_US
dc.citation.epage		en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.identifier.wosnumber	WOS:000306748000035	-
dc.citation.woscount	1	-
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