完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChu, Ming-Huien_US
dc.contributor.authorLiang, S. W.en_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorHuang, Annie T.en_US
dc.date.accessioned2014-12-08T15:24:03Z-
dc.date.available2014-12-08T15:24:03Z-
dc.date.issued2012-09-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://hdl.handle.net/11536/16715-
dc.description.abstract"Organic solderable preservative (OSP) has been adopted as the Cu substrate surface finish in flip-chip solder joints for many years. In this study, the electromigration behavior of lead-free Sn-Cu solder alloys with thin-film under bump metallization and OSP surface finish was investigated. The results showed that severe damage occurred on the substrate side (cathode side), whereas the damage on the chip side (cathode side) was not severe. The damage on the substrate side included void formation, copper dissolution, and formation of intermetallic compounds (IMCs). The OSP Cu interface on the substrate side became the weakest point in the solder joint even when thin-film metallization was used on the chip side. Three-dimensional simulations were employed to investigate the current density distribution in the area between the OSP Cu surface finish and the solder. The results indicated that the current density was higher along the periphery of the bonding area between the solder and the Cu pad, consistent with the area of IMC and void formation in our experimental results."en_US
dc.language.isoen_USen_US
dc.subjectElectromigrationen_US
dc.subjectsolder jointsen_US
dc.titleElectromigration Failure Mechanism in Sn-Cu Solder Alloys with OSP Cu Surface Finishen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume41en_US
dc.citation.issue9en_US
dc.citation.epage2502en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000307289400029-
dc.citation.woscount1-
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