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dc.contributor.authorFan, Yang-Shunen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorTeng, Li-Fengen_US
dc.contributor.authorHsu, Ching-Huien_US
dc.date.accessioned2014-12-08T15:24:05Z-
dc.date.available2014-12-08T15:24:05Z-
dc.date.issued1970-01-01en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/52901en_US
dc.identifier.urihttp://hdl.handle.net/11536/16745-
dc.description.abstract"Resistive random access memory using Al-doped zinc tin oxide (AZTO) as resistive switching layer was prepared by radio-frequency magnetron sputtering at room temperature. The Ti/AZTO/Pt device exhibits reversible and robust bi-stable resistance switching behavior over hundreds of switching cycles within 2 V sweep voltage. The Ti/AZTO/Pt device showed stable retention characteristics for over 104 s under read disturb stress condition. Besides, the electrical conduction mechanism was dominated by ohmic conduction in low resistance state, while the current transport behavior followed a trap-controlled space-charge-limited conduction process in high resistance state. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742737]"en_US
dc.language.isoen_USen_US
dc.titleBipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applicationsen_US
dc.typeArticleen_US
dc.identifier.doi52901en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume101en_US
dc.citation.issue5en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000307676600054-
dc.citation.woscount6-
Appears in Collections:Articles


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