Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

doi:52901

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DC 欄位	值	語言
dc.contributor.author	Fan, Yang-Shun	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.contributor.author	Teng, Li-Feng	en_US
dc.contributor.author	Hsu, Ching-Hui	en_US
dc.date.accessioned	2014-12-08T15:24:05Z	-
dc.date.available	2014-12-08T15:24:05Z	-
dc.date.issued	1970-01-01	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/52901	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16745	-
dc.description.abstract	"Resistive random access memory using Al-doped zinc tin oxide (AZTO) as resistive switching layer was prepared by radio-frequency magnetron sputtering at room temperature. The Ti/AZTO/Pt device exhibits reversible and robust bi-stable resistance switching behavior over hundreds of switching cycles within 2 V sweep voltage. The Ti/AZTO/Pt device showed stable retention characteristics for over 104 s under read disturb stress condition. Besides, the electrical conduction mechanism was dominated by ohmic conduction in low resistance state, while the current transport behavior followed a trap-controlled space-charge-limited conduction process in high resistance state. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742737]"	en_US
dc.language.iso	en_US	en_US
dc.title	Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications	en_US
dc.type	Article	en_US
dc.identifier.doi	52901	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	101	en_US
dc.citation.issue	5	en_US
dc.citation.epage		en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000307676600054	-
dc.citation.woscount	6	-
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