標題: | Surface-bound-exciton emission associated with domain interfaces in m-plane ZnO films |
作者: | Kuo, C. C. Lin, B. H. Yang, Song Liu, W. R. Hsieh, W. F. Hsu, C-H 光電工程學系 Department of Photonics |
公開日期: | 1-Jan-1970 |
摘要: | "Small amount of (10 (1) over bar3)(ZnO) domains were found in the m-plane ZnO films grown on m-sapphire by pulsed laser deposition, which provide strain relaxation of the m-ZnO matrix behaving as a low strain layer. Through carefully correlating low-temperature polarized photoluminescence spectra with the x-ray diffraction peak intensity ratio of (10 (1) over bar3)(ZnO)/(10 (1) over bar0)(ZnO) of the samples grown at different temperature and after thermal treatment, we found that the broad-band emission around 3.17 eV may result from the interface defects trapped excitons at the boundaries between the (10 (1) over bar3)(ZnO) domains and the m-ZnO matrix. The more (10 (1) over bar3)(ZnO) domains in the m-ZnO layer cause the more surface boundary that makes the stronger surface-bound-exciton emission. And the a-axes of both the (10 (1) over bar3)(ZnO) domains and the m-ZnO matrix are aligned with the c-axis of the sapphire (alpha-Al2O3) substrate. The c-axis of the (10 (1) over bar3)(ZnO) domains rotates by about +/- 59 degrees against the common a-axis of the m-ZnO. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4732140]" |
URI: | http://dx.doi.org/11901 http://hdl.handle.net/11536/16752 |
ISSN: | 0003-6951 |
DOI: | 11901 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 101 |
Issue: | 1 |
結束頁: | |
Appears in Collections: | Articles |
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