標題: A Novel Synthesis of a CuInSe2 Thin Film from Electrodeposited Cu-Se-In-Se Precursors with Three Steps Annealing
作者: Hu, Shao-Yu
Lee, Wen-Hsi
Chang, Shih-Chieh
Wang, Ying-Lang
照明與能源光電研究所
Institute of Lighting and Energy Photonics
關鍵字: CuInSe2;CIS;Annealing;Electrodeposition
公開日期: 1-Sep-2012
摘要: In this study, copper indium diselenide (CIS) films were synthesized from electrodeposited Cu-Se In Se precursors by three step annealing. The Se layer between Cu and In layer was grown to prevent the formation of Cu/In compound. The Cu Se precursors were first annealed to grow uniform and conductive Cu2Se surface. After deposition of the four layers precursors, two steps annealing was employed to form Cu2Se-In2Se3 precursors. Transforming Cu2Se-In2Se3 to CIS required less thermal energy. Therefore, high quality CIS film can be synthesized by two steps annealing due to its high crystallinity. The properties of the CIS films were characterized by scanning electron microscopy (SEM), X-ray Diffraction (XRD), and Raman Spectra.
URI: http://dx.doi.org/10.1166/jnn.2012.6164
http://hdl.handle.net/11536/16867
ISSN: 1533-4880
DOI: 10.1166/jnn.2012.6164
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 12
Issue: 9
起始頁: 7226
結束頁: 7232
Appears in Collections:Articles