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dc.contributor.authorChang, Chia-Hungen_US
dc.contributor.authorWang, Taoen_US
dc.contributor.authorJou, Christina F.en_US
dc.date.accessioned2014-12-08T15:24:18Z-
dc.date.available2014-12-08T15:24:18Z-
dc.date.issued2012-08-30en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el.2012.1439en_US
dc.identifier.urihttp://hdl.handle.net/11536/16894-
dc.description.abstractA fully integrated low-power LNA with dual cross-coupling and forward body bias (FBB) techniques is presented. The first cross-coupling circuit is applied at the transconductance stage. By connecting body nodes to each other's source terminals, the body cross-coupling network forms the gate-driven and body-driven simultaneously input stage to gain its effective transconductance, which in turn improves the noise performance and decreases current consumption. In addition, the second capacitor cross-coupling configuration is applied at the input stage to form a feed-forward connection, which results in not only boosting the effective transconductance, but also reducing the influence of the gate noise from the input transistors as well. Moreover, to decrease the overall power consumption further, the FBB technique is employed to lower the supply voltage. The measured noise figure is lower than 3.38 dB and the core circuit consumes only 2.16 mW.en_US
dc.language.isoen_USen_US
dc.titleDual cross-coupling LNA with forward body bias techniqueen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el.2012.1439en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume48en_US
dc.citation.issue18en_US
dc.citation.spage1100en_US
dc.citation.epage1101en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000308552200010-
dc.citation.woscount0-
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