標題: Characterization and modeling of trap number and creation time distributions under negative-bias-temperature stress
作者: Chiu, Jung-Piao
Li, Chi-Wei
Wang, Tahui
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 20-Aug-2012
摘要: Individual trapped charge creations and a trap number in p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) under negative bias temperature instability (NBTI) stress are investigated. We find that the characteristic times of a trapped charge creation scatter over several decades of time in small area pMOSFETs, which is attributed to an activation energy distribution in the reaction-diffusion (RD) model of NBTI. We develop a statistical model by combining the RD model with an extracted activation energy distribution to calculate a threshold voltage shift distribution at different NBTI stress times. Our model agrees with measured results very well. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748108]
URI: http://dx.doi.org/10.1063/1.4748108
http://hdl.handle.net/11536/16903
ISSN: 0003-6951
DOI: 10.1063/1.4748108
期刊: APPLIED PHYSICS LETTERS
Volume: 101
Issue: 8
結束頁: 
Appears in Collections:Articles


Files in This Item:

  1. 000308420800071.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.