标题: | Sensitivity enhancement in SiGe-on-insulator nanowire biosensor fabricated by top surface passivation |
作者: | Lai, Chiung-Hui Chang, Kow-Ming Chen, Chu-Feng Hsieh, Cheng-Ting Wu, Chin-Ning Wang, Yu-Bin Liu, Chung-Hsien Chang, Kuo-Chin 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 1-八月-2012 |
摘要: | The oxidation caused by Ge condensation increases the Ge fraction in a SiGe-on-insulator (SGOI) and significantly increases the hole mobility. This effect can be exploited to improve the sensitivity of SGOI nanowires. However, previous studies have found that the sensitivity of SGOI nanowires degrades when the Ge fraction exceeds 20%, because a high Ge fraction destabilises the surface state of SiGe. In this work, a top surface passivation plasma-enhanced chemical vapour deposition SiO2 layer deposited on a Si0.8Ge0.2 nanowire improved its sensitivity by similar to 1.3 times that of the nanowire sample without a top passivation layer. |
URI: | http://dx.doi.org/10.1049/mnl.2012.0214 http://hdl.handle.net/11536/16924 |
ISSN: | 1750-0443 |
DOI: | 10.1049/mnl.2012.0214 |
期刊: | MICRO & NANO LETTERS |
Volume: | 7 |
Issue: | 8 |
起始页: | 729 |
结束页: | 732 |
显示于类别: | Articles |
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