标题: | Investigation of Low Frequency Noise in Uniaxial Strained PMOSFETs |
作者: | Kuo, Jack J. -Y. Chen, William P. -N. Su, Pin 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 2009 |
摘要: | We have investigated the low frequency noise characteristics for uniaxial strained PMOSFETs. In the low vertical bar V(gst)vertical bar regime, the 1/f noise is dominated by the carrier-number-fluctuations and the S(Id)/I(d)(2) is increased by the enhanced g(m)/I(d) for the strained device. Nevertheless, the S(Id)/I(d)(2) of the strained device is almost the same as the unstrained one at a given g(m)/I(d). Furthermore, with the application of uniaxial compressive strain, the attenuation length lambda is reduced because of the increased out-on-plane effective mass and tunneling barrier height. The reduced lambda may result in a smaller S(Vg). In the high vertical bar V(gst)vertical bar regime, the 1/f noise is dominated by the mobility-fluctuations and the S(Id)/I(d)(2) is increased due to the larger Hooge parameter for the strained device. |
URI: | http://hdl.handle.net/11536/16977 |
ISBN: | 978-1-4244-2784-0 |
期刊: | PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS |
起始页: | 82 |
结束页: | 83 |
显示于类别: | Conferences Paper |