标题: Investigation of Low Frequency Noise in Uniaxial Strained PMOSFETs
作者: Kuo, Jack J. -Y.
Chen, William P. -N.
Su, Pin
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
公开日期: 2009
摘要: We have investigated the low frequency noise characteristics for uniaxial strained PMOSFETs. In the low vertical bar V(gst)vertical bar regime, the 1/f noise is dominated by the carrier-number-fluctuations and the S(Id)/I(d)(2) is increased by the enhanced g(m)/I(d) for the strained device. Nevertheless, the S(Id)/I(d)(2) of the strained device is almost the same as the unstrained one at a given g(m)/I(d). Furthermore, with the application of uniaxial compressive strain, the attenuation length lambda is reduced because of the increased out-on-plane effective mass and tunneling barrier height. The reduced lambda may result in a smaller S(Vg). In the high vertical bar V(gst)vertical bar regime, the 1/f noise is dominated by the mobility-fluctuations and the S(Id)/I(d)(2) is increased due to the larger Hooge parameter for the strained device.
URI: http://hdl.handle.net/11536/16977
ISBN: 978-1-4244-2784-0
期刊: PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS
起始页: 82
结束页: 83
显示于类别:Conferences Paper