完整後設資料紀錄
DC 欄位語言
dc.contributor.authorBAI, SNen_US
dc.contributor.authorTSENG, TYen_US
dc.date.accessioned2014-12-08T15:03:08Z-
dc.date.available2014-12-08T15:03:08Z-
dc.date.issued1995-10-01en_US
dc.identifier.issn0002-7820en_US
dc.identifier.urihttp://hdl.handle.net/11536/1704-
dc.description.abstractThe relationship between the electrical characteristics of the ZnO varistors and applied current impulse is investigated in this study, The degradation phenomena of the ZnO varistors due to current impulse are studied by I-V and ac measurements, The influence of various numbers of applied surge on the I-V behaviors, V-0.1mA and leakage current, is attributed to the asymmetrical deformation of the grain-boundary barriers, As the applied impulses increase, the changes observed in the properties of deep bulk trap and conduction mechanism are attributed to the alternation of defect structure and model of conduction.en_US
dc.language.isoen_USen_US
dc.titleDEGRADATION PHENOMENA DUE TO IMPULSE-CURRENT IN ZINC-OXIDE VARISTORSen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE AMERICAN CERAMIC SOCIETYen_US
dc.citation.volume78en_US
dc.citation.issue10en_US
dc.citation.spage2685en_US
dc.citation.epage2689en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
顯示於類別:期刊論文