The strain status of the buried self-assembled InAs quantum dots using MeV technique

Abstract

The strain status of the buried self-assembled InAs quantum dots was comprehended by measurement first time. Results show the in-plane strain is compressive and the lattice in the growth direction is lager than the lattice of GaAs. The strain of the sample annealed at 650 degrees C relaxes in the growth direction. The growth and the lateral direction become relaxed in the sample annealed at 750 degrees C.