標題: High-performance In0.52Al0.48As/In(0.6)Ga(0.)4As power metamorphic HEMT for Ka-band applications
作者: Chang, Chia-Yuan
Chang, Edward Yi
Lien, Yi-Chung
Miyamoto, Yasuyuki
Chen, Szu-Hung
Chu, Li-Hsin
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2006
摘要: A 70-nm In0.52Al0.48As/In0.6Ga0.4As power MHEMT with double delta-doping was fabricated and evaluated. The device has a high transconductance of 827 mS/mm. The saturated drain-source current of the device is 890 mA/mm. A current gain cutoff frequency (f(T)) of 200 GHz and a maximum oscillation frequency of 300 GHz were achieved due to the nanometer gate length and the high Indium content in the channel. When measured at 32 GHz, the 4 x 40 mu m device demonstrates a maximum output power of 14.5 dBm with P1dB of 11.1 dBm and the power gain is 9.5 dB. The excellent DC and RF performance of the 70-nm MHEMT shows a great potential for Ka-band power applications.
URI: http://hdl.handle.net/11536/17216
http://dx.doi.org/10.1109/SMELEC.2006.381095
ISBN: 978-0-7803-9730-9
DOI: 10.1109/SMELEC.2006.381095
期刊: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings
起始頁: 422
結束頁: 424
Appears in Collections:Conferences Paper


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