A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs

標題:	A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs
作者:	Chen, William P. N. Su, P. Wang, J. S. Lien, C. H. Chang, C. H. Goto, K. Diaz, C. H. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2006
URI:	http://hdl.handle.net/11536/17322
ISBN:	1-4244-0181-X
期刊:	2006 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Proceedings of Technical Papers
起始頁:	143
結束頁:	144
Appears in Collections:	Conferences Paper