标题: ESD (Electrostatic Discharge) protection design for nanoelectronics in CMOS technology
作者: Ker, Ming-Dou
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公开日期: 2006
摘要: In this tutorial, we teach useful on-chip ESD protection designs for CMOS integrated circuits. The contents include (1) Introduction to Electrostatic Discharge, (2) Design Techniques of ESD Protection Circuit, (3) Whole-Chip ESD Protection Design, and (4) ESD Protection for Mixed-Voltage I/O Interface. The clear ESD protection design concepts and detailed circuit implementations are presented in this course. ESD protection design is more important in the nanoscale CMOS technology. High ESD robustness can not be achieved with only process solutions. The circuit design solutions should be added into the chips with suitable layout arrangement to achieve the purpose of whole-chip ESD protection for IC products.
URI: http://hdl.handle.net/11536/17334
ISBN: 1-4244-0460-6
期刊: Advanced Signal Processing, Circuits, and System Design Techniques for Communications
起始页: 217
结束页: 279
显示于类别:Conferences Paper